1N5818G

Производитель: ON Semiconductor
Описание: -; 1A; 1mA @ 30V; Schottky; Through Hole; -65°C ~ 125°C; DO-204AL, DO-41, Axial; Bulk Alternate Packaging; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 30V; 550mV @ 1A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 1mA @ 30V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 125°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Bulk Alternate Packaging
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 30V
50%
Voltage - Forward (Vf) (Max) @ If 550mV @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N5818RLG - 1A 1mA @ 30V Schottky Through Hole -65°C ~ 125°C
1N5818RLG - 1A 1mA @ 30V Schottky Through Hole -65°C ~ 125°C
1N5818-E3/54 110pF @ 4V, 1MHz 1A 1mA @ 30V Schottky Through Hole -65°C ~ 125°C
1N5818HA0G 55pF @ 4V, 1MHz 1A 1mA @ 30V Schottky Through Hole -55°C ~ 125°C
1N5818 B0G 55pF @ 4V, 1MHz 1A 1mA @ 30V Schottky Through Hole -55°C ~ 125°C
1N5818HB0G 55pF @ 4V, 1MHz 1A 1mA @ 30V Schottky Through Hole -55°C ~ 125°C
1N5818-TP - 1A 1mA @ 30V Schottky Through Hole -55°C ~ 125°C
1N5818 110pF @ 4V, 1MHz 1A 500µA @ 30V Schottky Through Hole -65°C ~ 125°C
1N5818/54 - 1A 1mA @ 30V Schottky Through Hole -65°C ~ 125°C
SR103-T 110pF @ 4V, 1MHz 1A 1mA @ 30V Schottky Through Hole -65°C ~ 150°C