SF18GHB0G

Производитель: Taiwan Semiconductor Corporation
Описание: 10pF @ 4V, 1MHz; 1A; 5µA @ 600V; Standard; Through Hole; -55°C ~ 150°C; DO-204AL, DO-41, Axial; Bulk; 35ns; This part is RoHS compliant.; Automotive, AEC-Q101; Fast Recovery =< 500ns, > 200mA (Io); 600V; 1.7V @ 1A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 10pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Bulk
50%
Reverse Recovery Time (trr) 35ns
50%
RoHS This part is RoHS compliant.
50%
Series Automotive, AEC-Q101
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.7V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
SF18G A0G 10pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -55°C ~ 150°C
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1N4937GHB0G 10pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -55°C ~ 150°C
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SF18G R0G 10pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -55°C ~ 150°C
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SF17GHB0G 10pF @ 4V, 1MHz 1A 5µA @ 500V Standard Through Hole -55°C ~ 150°C