1N5820-E3/54
| Производитель: | Vishay Semiconductor Diodes Division |
| Описание: | -; 3A; 2mA @ 20V; Schottky; Through Hole; -65°C ~ 125°C; DO-201AD, Axial; Cut Tape (CT) Alternate Packaging; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 20V; 475mV @ 3A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 3A |
|
50%
|
Current - Reverse Leakage @ Vr | 2mA @ 20V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Through Hole |
|
50%
|
Operating Temperature - Junction | -65°C ~ 125°C |
|
50%
|
Package / Case | DO-201AD, Axial |
|
50%
|
Packaging | Cut Tape (CT) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 20V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 475mV @ 3A |