BR25G128FVT-3GE2

Производитель: Rohm Semiconductor
Описание: IC EEPROM 128KBIT 20MHZ 8TSSOP
Аналоги
% соответствия
Product Attributes
50%
Access Time -
50%
Clock Frequency 20MHz
50%
Memory Format EEPROM
50%
Memory Interface SPI
50%
Memory Size 128Kb (16K x 8)
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Memory Type Non-Volatile
50%
Mounting Type Surface Mount
50%
Operating Temperature -40°C ~ 85°C (TA)
50%
Package / Case 8-TSSOP (0.173", 4.40mm Width)
50%
Packaging Digi-Reel® Alternate Packaging
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Technology EEPROM
50%
Voltage - Supply 1.6 V ~ 5.5 V
50%
Write Cycle Time - Word, Page 5ms

Аналоги:

Название Access Time Clock Frequency Memory Format Memory Interface Memory Size Memory Type
BR25G640NUX-3TR - 20MHz EEPROM SPI 64Kb (8K x 8) Non-Volatile
BR25G640FJ-3GE2 - 20MHz EEPROM SPI 64Kb (8K x 8) Non-Volatile
BR25G128FVT-3GE2 - 20MHz EEPROM SPI 128Kb (16K x 8) Non-Volatile
CAT25256YI-GT3 - 20MHz EEPROM SPI 256Kb (32K x 8) Non-Volatile
BR25G256FJ-3GE2 - 20MHz EEPROM SPI 256Kb (32K x 8) Non-Volatile
BR25G256FVT-3GE2 - 20MHz EEPROM SPI 256Kb (32K x 8) Non-Volatile
BR25G256FVT-3GE2 - 20MHz EEPROM SPI 256Kb (32K x 8) Non-Volatile
CAT25160YI-GT3 - 20MHz EEPROM SPI 16Kb (2K x 8) Non-Volatile
S-25C160A0I-T8T1U3 - 5MHz EEPROM SPI 16Kb (2K x 8) Non-Volatile
CAT25128VI-GT3 - 20MHz EEPROM SPI 128Kb (16K x 8) Non-Volatile