BR25G1MF-3GE2

Производитель: Rohm Semiconductor
Описание: IC EEPROM 1MBIT 10MHZ 8SOP
Аналоги
% соответствия
Product Attributes
50%
Access Time -
50%
Clock Frequency 10MHz
50%
Memory Format EEPROM
50%
Memory Interface SPI
50%
Memory Size 1Mb (128K x 8)
50%
Memory Type Non-Volatile
50%
Mounting Type Surface Mount
50%
Operating Temperature -40°C ~ 85°C (TA)
50%
Package / Case 8-SOIC (0.173", 4.40mm Width)
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Technology EEPROM
50%
Voltage - Supply 1.8 V ~ 5.5 V
50%
Write Cycle Time - Word, Page 5ms

Аналоги:

Название Access Time Clock Frequency Memory Format Memory Interface Memory Size Memory Type
BR93L66RF-WE2 - 2MHz EEPROM SPI 4Kb (256 x 16) Non-Volatile
BR93L76F-WE2 - 2MHz EEPROM SPI 8Kb (512 x 16) Non-Volatile
BR25L020F-WE2 - 5MHz EEPROM SPI 2Kb (256 x 8) Non-Volatile
BR25G1MFJ-3GE2 - 10MHz EEPROM SPI 1Mb (128K x 8) Non-Volatile
BR25G1MF-3GE2 - 10MHz EEPROM SPI 1Mb (128K x 8) Non-Volatile
CAT25320YI-GT3 - 10MHz EEPROM SPI 32Kb (4K x 8) Non-Volatile
BR93L56F-WE2 - 2MHz EEPROM SPI 2Kb (128 x 16) Non-Volatile
25AA010AT-I/OT - 10MHz EEPROM SPI 1Kb (128 x 8) Non-Volatile
25AA040AT-I/OT - 10MHz EEPROM SPI 4Kb (512 x 8) Non-Volatile
25AA160DT-I/MNY - 10MHz EEPROM SPI 16Kb (2K x 8) Non-Volatile