MUR2100EG

Производитель: ON Semiconductor
Описание: -; 2A; 10µA @ 1000V; Standard; Through Hole; -65°C ~ 175°C; DO-204AL, DO-41, Axial; Bulk Alternate Packaging; 100ns; This part is RoHS compliant.; SWITCHMODE™; Fast Recovery =< 500ns, > 200mA (Io); 1000V; 2.2V @ 2A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 2A
50%
Current - Reverse Leakage @ Vr 10µA @ 1000V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Bulk Alternate Packaging
50%
Reverse Recovery Time (trr) 100ns
50%
RoHS This part is RoHS compliant.
50%
Series SWITCHMODE™
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 1000V
50%
Voltage - Forward (Vf) (Max) @ If 2.2V @ 2A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MUR2100EG - 2A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR2100ERLG - 2A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR2100ERLG - 2A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR1100EG - 1A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR2100E - 2A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR2100ERL - 2A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C