1N5407-TP

Производитель: Micro Commercial Co
Описание: DIODE GEN PURP 800V 3A DO201AD
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 40pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 5µA @ 800V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-201AD, Axial
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 800V
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N5407-TP 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5407-TP 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5407G-T 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -65°C ~ 150°C
1N5407GHR0G 25pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5407GHA0G 25pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
BY254P-E3/73 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
BY254P-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5407G B0G 25pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5407GP-TP 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N5627GP-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 800V Standard Through Hole -65°C ~ 175°C