MUR180ERLG

Производитель: ON Semiconductor
Описание: DIODE GEN PURP 800V 1A AXIAL
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 10µA @ 800V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 100ns
50%
RoHS This part is RoHS compliant.
50%
Series SWITCHMODE™
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 800V
50%
Voltage - Forward (Vf) (Max) @ If 1.75V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MUR180EG - 1A 10µA @ 800V Standard Through Hole -65°C ~ 175°C
MUR180ERLG - 1A 10µA @ 800V Standard Through Hole -65°C ~ 175°C
MUR180ERLG - 1A 10µA @ 800V Standard Through Hole -65°C ~ 175°C
MUR1100ERLG - 1A 10µA @ 1000V Standard Through Hole -65°C ~ 175°C
MUR180E - 1A 10µA @ 800V Standard Through Hole -65°C ~ 175°C
MUR180ERL - 1A 10µA @ 800V Standard Through Hole -65°C ~ 175°C