RR1LAM6STR

Производитель: Rohm Semiconductor
Описание: DIODE GEN PURP 600V 1A PMDTM
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 10µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction 150°C (Max)
50%
Package / Case SOD-128
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
RR1LAM6STR - 1A 10µA @ 600V Standard Surface Mount 150°C (Max)
RR1LAM6STR - 1A 10µA @ 600V Standard Surface Mount 150°C (Max)
RR2LAM6STR - 2A 10µA @ 600V Standard Surface Mount 150°C (Max)
1SR154-600TE25 - 1A 10µA @ 600V Standard Surface Mount 150°C (Max)
1SR154-600TE25 - 1A 10µA @ 600V Standard Surface Mount 150°C (Max)
GL41J-E3/96 8pF @ 4V, 1MHz 1A 10µA @ 600V Standard Surface Mount -65°C ~ 175°C
1N6482-E3/96 8pF @ 4V, 1MHz 1A 10µA @ 600V Standard Surface Mount -65°C ~ 175°C
MRA4005T3G - 1A 10µA @ 600V Standard Surface Mount -55°C ~ 175°C
MRA4005T1G - 1A 10µA @ 600V Standard Surface Mount -55°C ~ 175°C
DSP10G-TR-E - 1A 10µA @ 600V Standard Surface Mount 150°C (Max)