STTH4R02BY-TR

Производитель: STMicroelectronics
Описание: DIODE GEN PURP 200V 4A DPAK
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 4A
50%
Current - Reverse Leakage @ Vr 3µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -40°C ~ 175°C
50%
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 30ns
50%
RoHS This part is RoHS compliant.
50%
Series Automotive, AEC-Q101
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 1.05V @ 4A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
STTH4R02BY-TR - 4A 3µA @ 200V Standard Surface Mount -40°C ~ 175°C
STTH4R02BY-TR - 4A 3µA @ 200V Standard Surface Mount -40°C ~ 175°C
STTH4R02BY-TR - 4A 3µA @ 200V Standard Surface Mount -40°C ~ 175°C