SA2M-E3/61T

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 1KV 2A DO214AC
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 11pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 2A
50%
Current - Reverse Leakage @ Vr 3µA @ 1000V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-214AC, SMA
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 1.5µs
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 1000V
50%
Voltage - Forward (Vf) (Max) @ If 1.1V @ 2A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
SA2M-E3/61T 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2M-E3/61T 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2M-E3/61T 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2M-E3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2M-E3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2M-M3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2B-M3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2G-M3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2J-M3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C
SA2K-M3/5AT 11pF @ 4V, 1MHz 2A 3µA @ 1000V Standard Surface Mount -55°C ~ 150°C