EGP10A

Производитель: Fairchild/ON Semiconductor
Описание: DIODE GEN PURP 50V 1A DO41
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 50V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 50V
50%
Voltage - Forward (Vf) (Max) @ If 950mV @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
UF1001-T 20pF @ 4V, 1MHz 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
UF1001-T 20pF @ 4V, 1MHz 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
1N4933-T 15pF @ 4V, 1MHz 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
HER101-T - 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
HER101-T - 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
EGP10D - 1A 5µA @ 200V Standard Through Hole -65°C ~ 150°C
EGP10A - 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
UF4001 17pF @ 4V, 1MHz 1A 10µA @ 50V Standard Through Hole -65°C ~ 150°C
EGP10C - 1A 5µA @ 150V Standard Through Hole -65°C ~ 150°C
EGP10D-E3/54 22pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -65°C ~ 150°C