ES1J

Производитель:	Fairchild/ON Semiconductor
Описание:	DIODE GEN PURP 600V 1A SMA

Аналоги % соответствия	Product Attributes
50%	Capacitance @ Vr, F	8pF @ 0V, 1MHz
50%	Current - Average Rectified (Io)	1A
50%	Current - Reverse Leakage @ Vr	5µA @ 600V
50%	Diode Type	Стандарт
50%	Mounting Type	Surface Mount
50%	Operating Temperature - Junction	150°C (Max)
50%	Package / Case	DO-214AC, SMA
50%	Packaging	Tape & Reel (TR) Alternate Packaging
50%	Reverse Recovery Time (trr)	35ns
50%	RoHS	This part is RoHS compliant.
50%	Series	-
50%	Speed	Fast Recovery =< 500ns, > 200mA (Io)
50%	Voltage - DC Reverse (Vr) (Max)	600V
50%	Voltage - Forward (Vf) (Max) @ If	1.7V @ 1A

Релевантность

Название	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Diode Type	Mounting Type	Operating Temperature - Junction
CD214A-F1600	10pF @ 4V, 1MHz	1A	5µA @ 600V	Standard	Surface Mount	-55°C ~ 150°C
ES1J-LTP	15pF @ 4V, 1MHz	1A	5µA @ 600V	Standard	Surface Mount	-65°C ~ 175°C
ES1J	8pF @ 0V, 1MHz	1A	5µA @ 600V	Standard	Surface Mount	150°C (Max)
ES1J	8pF @ 0V, 1MHz	1A	5µA @ 600V	Standard	Surface Mount	150°C (Max)
ES1J	8pF @ 0V, 1MHz	1A	5µA @ 600V	Standard	Surface Mount	150°C (Max)