CRS09(TE85L,Q,M)
| Производитель: | Toshiba Semiconductor and Storage |
| Описание: | 90pF @ 10V, 1MHz; 1.5A; 50µA @ 30V; Schottky; Surface Mount; -40°C ~ 150°C; SOD-123F; Cut Tape (CT) Alternate Packaging; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 30V; 460mV @ 1.5A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | 90pF @ 10V, 1MHz |
|
50%
|
Current - Average Rectified (Io) | 1.5A |
|
50%
|
Current - Reverse Leakage @ Vr | 50µA @ 30V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -40°C ~ 150°C |
|
50%
|
Package / Case | SOD-123F |
|
50%
|
Packaging | Cut Tape (CT) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 30V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 460mV @ 1.5A |