MURD320T4G

Производитель: ON Semiconductor
Описание: DIODE GEN PURP 200V 3A DPAK
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 5µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 35ns
50%
RoHS This part is RoHS compliant.
50%
Series SWITCHMODE™
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 950mV @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MURD320T4G - 3A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C
MURD320T4G - 3A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C
MURD320T4G - 3A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C
NRVUD320W1T4G-VF01 - 3A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C
NRVUD320VT4G - 3A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C