MBRD360T4G
| Производитель: | ON Semiconductor |
| Описание: | -; 3A; 200µA @ 60V; Schottky; Surface Mount; -65°C ~ 150°C; TO-252-3, DPak (2 Leads + Tab), SC-63; Cut Tape (CT) Alternate Packaging; -; This part is RoHS compliant.; SWITCHMODE™; Fast Recovery =< 500ns, > 200mA (Io); 60V; 600mV @ 3A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 3A |
|
50%
|
Current - Reverse Leakage @ Vr | 200µA @ 60V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -65°C ~ 150°C |
|
50%
|
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
50%
|
Packaging | Cut Tape (CT) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | SWITCHMODE™ |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 60V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 600mV @ 3A |