MBR10100HC0G

Производитель: Taiwan Semiconductor Corporation
Описание: -; 10A; 100µA @ 100V; Schottky; Through Hole; -55°C ~ 150°C; TO-220-2; Tube; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 100V; 850mV @ 10A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 10A
50%
Current - Reverse Leakage @ Vr 100µA @ 100V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case TO-220-2
50%
Packaging Tube
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 100V
50%
Voltage - Forward (Vf) (Max) @ If 850mV @ 10A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MBR10100G - 10A 100µA @ 100V Schottky Through Hole -65°C ~ 175°C
MBR10100 - - 1mA @ 100V Schottky Through Hole -55°C ~ 150°C
MBRF10100CT C0G - 10A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C
MBR10100HC0G - 10A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C
MBR10100-E3/4W - 10A 100µA @ 100V Schottky Through Hole -65°C ~ 150°C
TST20L100CW C0G - 10A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C
SRA10100HC0G - 10A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C
SRA1090HC0G - 10A 100µA @ 90V Schottky Through Hole -55°C ~ 150°C
SRA16100 C0G - 16A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C
SRA16100HC0G - 16A 100µA @ 100V Schottky Through Hole -55°C ~ 150°C