EGP30G

Производитель: Fairchild/ON Semiconductor
Описание: DIODE GEN PURP 400V 3A DO201AD
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 75pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 5µA @ 400V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case DO-201AD, Axial
50%
Packaging Tape & Reel (TR) Alternate Packaging
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 400V
50%
Voltage - Forward (Vf) (Max) @ If 1.25V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
EGP30F 75pF @ 4V, 1MHz 3A 5µA @ 300V Standard Through Hole -65°C ~ 150°C
EGP30G 75pF @ 4V, 1MHz 3A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
EGP30G 75pF @ 4V, 1MHz 3A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
UF3004-T 75pF @ 4V, 1MHz 3A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
UG3004-T 60pF @ 4V, 1MHz 3A 5µA @ 400V Standard Through Hole -65°C ~ 150°C