BY251GP-E3/73

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 200V 3A DO201AD
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 40pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 5µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case DO-201AD, Axial
50%
Packaging Cut Tape (CT)
50%
Reverse Recovery Time (trr) 3µs
50%
RoHS This part is RoHS compliant.
50%
Series SUPERECTIFIER®
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 1.1V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
BY251GP-E3/73 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
BY251GP-E3/73 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
BY251GPHE3/73 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
1N5624GPHE3/54 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
BY251GP-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
BY251GPHE3/54 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
BY255GP-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 1300V Standard Through Hole -65°C ~ 175°C
1N5624GP-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C
1N5624GP-E3/54 40pF @ 4V, 1MHz 3A 5µA @ 200V Standard Through Hole -65°C ~ 175°C