RF 1BV1

Производитель: Sanken
Описание: DIODE GEN PURP 800V 600MA AXIAL
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 600mA
50%
Current - Reverse Leakage @ Vr 10µA @ 800V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -40°C ~ 150°C
50%
Package / Case Axial
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 400ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 800V
50%
Voltage - Forward (Vf) (Max) @ If 2V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
RF 1BV1 - 600mA 10µA @ 800V Standard Through Hole -40°C ~ 150°C
RF 1BV1 - 600mA 10µA @ 800V Standard Through Hole -40°C ~ 150°C
RF 1B - 600mA 10µA @ 800V Standard Through Hole -40°C ~ 150°C
RF 1BV - 600mA 10µA @ 800V Standard Through Hole -40°C ~ 150°C