EGP50G-E3/54

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 400V 5A GP20
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 75pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 5A
50%
Current - Reverse Leakage @ Vr 5µA @ 400V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case DO-201AA, DO-27, Axial
50%
Packaging Tape & Reel (TR) Alternate Packaging
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series SUPERECTIFIER®
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 400V
50%
Voltage - Forward (Vf) (Max) @ If 1.25V @ 5A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
EGP50G-E3/54 75pF @ 4V, 1MHz 5A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
EGP50G-E3/54 75pF @ 4V, 1MHz 5A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
EGP50G-E3/73 75pF @ 4V, 1MHz 5A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
EGP50GHE3/73 75pF @ 4V, 1MHz 5A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
EGP50GHE3/54 75pF @ 4V, 1MHz 5A 5µA @ 400V Standard Through Hole -65°C ~ 150°C