MURS360BT3G

Производитель: ON Semiconductor
Описание: DIODE GEN PURP 600V 3A SMB
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 3µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case DO-214AA, SMB
50%
Packaging Tape & Reel (TR) Alternate Packaging
50%
Reverse Recovery Time (trr) 75ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.25V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MURS360T3G - 3A 10µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360BT3G - 3A 3µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360BT3G - 3A 3µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360BT3G - 3A 3µA @ 600V Standard Surface Mount -65°C ~ 175°C
SURS8360BT3G - 3A (DC) 30µA @ 300V Standard Surface Mount -65°C ~ 175°C
MURS360-E3/57T - 3A 10µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360S-M3/52T - 3A 10µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360S-E3/5BT - 3A 5µA @ 600V Standard Surface Mount -65°C ~ 175°C
MURS360S-E3/52T - 3A 5µA @ 600V Standard Surface Mount -65°C ~ 175°C
NRVUS360VBT3G - 3A 3µA @ 600V Standard Surface Mount -65°C ~ 175°C