EGF1A-E3/67A

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 50V 1A DO214BA
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 15pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 50V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -65°C ~ 175°C
50%
Package / Case DO-214BA
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series SUPERECTIFIER®
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 50V
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
EGF1D-E3/67A 15pF @ 4V, 1MHz 1A 5µA @ 200V Standard Surface Mount -65°C ~ 175°C
EGF1A-E3/67A 15pF @ 4V, 1MHz 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C
EGF1A-E3/67A 15pF @ 4V, 1MHz 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C
EGF1A-E3/67A 15pF @ 4V, 1MHz 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C
EGF1A-E3/5CA 15pF @ 4V, 1MHz 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C
EGF1AHE3/5CA - 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C
EGF1AHE3/67A - 1A 5µA @ 50V Standard Surface Mount -65°C ~ 175°C