VS-MBR735-N3
| Производитель: | Vishay Semiconductor Diodes Division |
| Описание: | 400pF @ 5V, 1MHz; 7.5A; 100µA @ 35V; Schottky; Through Hole; -65°C ~ 150°C; TO-220-2; Tube; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 35V; 840mV @ 15A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | 400pF @ 5V, 1MHz |
|
50%
|
Current - Average Rectified (Io) | 7.5A |
|
50%
|
Current - Reverse Leakage @ Vr | 100µA @ 35V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Through Hole |
|
50%
|
Operating Temperature - Junction | -65°C ~ 150°C |
|
50%
|
Package / Case | TO-220-2 |
|
50%
|
Packaging | Tube |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 35V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 840mV @ 15A |