HER203G A0G

Производитель: Taiwan Semiconductor Corporation
Описание: DIODE, HIGH EFFICIENT, 2A, 200V,
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 35pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 2A
50%
Current - Reverse Leakage @ Vr 5µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-204AC, DO-15, Axial
50%
Packaging Cut Tape (CT)
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 2A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
HER203G A0G 35pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
HER203G A0G 35pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
UG2D A0G 35pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
HER203G R0G 35pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
HER203G B0G 35pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
EGP20D-TP - 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
EGP20D-TP - 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
UG2003-T 30pF @ 4V, 1MHz 2A 5µA @ 200V Standard Through Hole -55°C ~ 150°C