1N4006-TP

Производитель: Micro Commercial Co
Описание: DIODE GEN PURP 800V 1A DO41
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 800V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Tape & Reel (TR)
50%
Reverse Recovery Time (trr) 2µs
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 800V
50%
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N4006-TP - 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006T-G 15pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006-E3/73 15pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006-E3/73 15pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006G R0G 10pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006GHR1G 10pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006GHR0G 10pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006E-E3/54 15pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006-E3/54 15pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4006 - 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C