BA158-E3/54

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 600V 1A DO204AL
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 12pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 125°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) 250ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
RGP10J 15pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -65°C ~ 175°C
RGP10J-E3/54 15pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -65°C ~ 175°C
BA158-E3/54 12pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -65°C ~ 125°C
BA158-E3/54 12pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -65°C ~ 125°C