1N4003GHA0G

Производитель: Taiwan Semiconductor Corporation
Описание: 10pF @ 4V, 1MHz; 1A; 5µA @ 200V; Standard; Through Hole; -55°C ~ 150°C; DO-204AL, DO-41, Axial; Tape & Box (TB); -; This part is RoHS compliant.; Automotive, AEC-Q101; Standard Recovery >500ns, > 200mA (Io); 200V; 1V @ 1A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 10pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Tape & Box (TB)
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series Automotive, AEC-Q101
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N4002GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -55°C ~ 150°C
1N4003GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
1N4004GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 400V Standard Through Hole -55°C ~ 150°C
1N4005GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -55°C ~ 150°C
1N4003G A0G 10pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
1N4006GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 800V Standard Through Hole -55°C ~ 150°C
1N4007GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 1000V Standard Through Hole -55°C ~ 150°C
1N4003GHB0G 10pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
1N4935GHA0G 10pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -55°C ~ 150°C
UF4003HA0G 17pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -55°C ~ 150°C