1N5819 R0G

Производитель: Taiwan Semiconductor Corporation
Описание: 55pF @ 4V, 1MHz; 1A; 1mA @ 40V; Schottky; Through Hole; -55°C ~ 125°C; DO-204AL, DO-41, Axial; Tape & Reel (TR); -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 40V; 600mV @ 1A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 55pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 1mA @ 40V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 125°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Tape & Reel (TR)
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 40V
50%
Voltage - Forward (Vf) (Max) @ If 600mV @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N5819 A0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819 A0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819 R1G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819 R0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819HR1G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819HR0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819HA0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819 B0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
1N5819HB0G 55pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -55°C ~ 125°C
SR104-T 110pF @ 4V, 1MHz 1A 1mA @ 40V Schottky Through Hole -65°C ~ 150°C