UPS5819E3TR7

Производитель: Microsemi Corporation
Описание: DIODE SCHOTTKY 40V 1A POWERMITE1
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 60pF @ 5V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 1mA @ 40V
50%
Diode Type Schottky
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-216AA
50%
Packaging Cut Tape (CT) Alternate Packaging
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 40V
50%
Voltage - Forward (Vf) (Max) @ If 550mV @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
UPS5819E3/TR13 60pF @ 5V, 1MHz 1A 1mA @ 20V Schottky Surface Mount -55°C ~ 150°C
UPS5819E3/TR13 60pF @ 5V, 1MHz 1A 1mA @ 20V Schottky Surface Mount -55°C ~ 150°C
UPS5819E3/TR13 60pF @ 5V, 1MHz 1A 1mA @ 20V Schottky Surface Mount -55°C ~ 150°C
5819SMJE3/TR13 - 1A 1mA @ 40V Schottky Surface Mount -55°C ~ 150°C
UPS5819E3TR7 60pF @ 5V, 1MHz 1A 1mA @ 40V Schottky Surface Mount -55°C ~ 150°C
UPS5819E3TR7 60pF @ 5V, 1MHz 1A 1mA @ 40V Schottky Surface Mount -55°C ~ 150°C
UPS5819E3TR7 60pF @ 5V, 1MHz 1A 1mA @ 40V Schottky Surface Mount -55°C ~ 150°C