
F1T3GHA1G
Производитель: | Taiwan Semiconductor Corporation |
Описание: | 15pF @ 4V, 1MHz; 1A; 5µA @ 200V; Standard; Through Hole; -55°C ~ 150°C; T-18, Axial; Tape & Box (TB); 150ns; This part is RoHS compliant.; Automotive, AEC-Q101; Fast Recovery =< 500ns, > 200mA (Io); 200V; 1.3V @ 1A; |
Аналоги % соответствия |
Product Attributes | |
---|---|---|
50%
|
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
50%
|
Current - Average Rectified (Io) | 1A |
50%
|
Current - Reverse Leakage @ Vr | 5µA @ 200V |
50%
|
Diode Type | Стандарт |
50%
|
Mounting Type | Through Hole |
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
50%
|
Package / Case | T-18, Axial |
50%
|
Packaging | Tape & Box (TB) |
50%
|
Reverse Recovery Time (trr) | 150ns |
50%
|
RoHS | This part is RoHS compliant. |
50%
|
Series | Automotive, AEC-Q101 |
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
50%
|
Voltage - DC Reverse (Vr) (Max) | 200V |
50%
|
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |