EGP10B-E3/73

Производитель: Vishay Semiconductor Diodes Division
Описание: 22pF @ 4V, 1MHz; 1A; 5µA @ 100V; Standard; Through Hole; -65°C ~ 150°C; DO-204AL, DO-41, Axial; Tape & Box (TB) Alternate Packaging; 50ns; This part is RoHS compliant.; SUPERECTIFIER®; Fast Recovery =< 500ns, > 200mA (Io); 100V; 950mV @ 1A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 22pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 100V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Tape & Box (TB) Alternate Packaging
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series SUPERECTIFIER®
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 100V
50%
Voltage - Forward (Vf) (Max) @ If 950mV @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
EGP10B-E3/54 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10A-E3/73 22pF @ 4V, 1MHz 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
EGP10B-E3/73 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10C-E3/73 22pF @ 4V, 1MHz 1A 5µA @ 150V Standard Through Hole -65°C ~ 150°C
EGP10D-E3/73 22pF @ 4V, 1MHz 1A 5µA @ 200V Standard Through Hole -65°C ~ 150°C
EGP10BE-E3/54 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10BEHE3/54 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10BHE3/54 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10BHM3/73 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
EGP10B-M3/54 22pF @ 4V, 1MHz 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C