1N5408GHA0G

Производитель: Taiwan Semiconductor
Описание: 25pF @ 4V, 1MHz; ; 3A; 5µA @ 1000V; Standard; EAR99; ; 8541.10.00.80; Through Hole; -55°C ~ 150°C; DO-201AD, Axial; Tape & Box (TB); 1N5408GHA0G; -; This part is RoHS compliant.; Automotive, AEC-Q101; Standard Recovery >500ns, > 200mA (Io); -; 1V @ 3A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 25pF @ 4V, 1MHz
50%
Cnrohs
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 5µA @ 1000V
50%
Diode Type Стандарт
50%
Eccn code EAR99
50%
Eurohs
50%
htsCode 8541.10.00.80
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-201AD, Axial
50%
Packaging Tape & Box (TB)
50%
Product code 1N5408GHA0G
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series Automotive, AEC-Q101
50%
Speed Standard Recovery >500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) -
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N5408G A0G 25pF @ 4V, 1MHz 3A 5µA @ 1000V Standard Through Hole -55°C ~ 150°C
1N5408GHR0G 25pF @ 4V, 1MHz 3A 5µA @ 1000V Standard Through Hole -55°C ~ 150°C
1N5408GHA0G 25pF @ 4V, 1MHz 3A 5µA @ 1000V Standard Through Hole -55°C ~ 150°C