SB360EA-G
| Производитель: | Comchip Technology |
| Описание: | 250pF @ 4V, 1MHz; 3A; 500µA @ 60V; Schottky; Through Hole; -65°C ~ 150°C; DO-201AD, Axial; Tape & Box (TB); -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 60V; 700mV @ 3A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | 250pF @ 4V, 1MHz |
|
50%
|
Current - Average Rectified (Io) | 3A |
|
50%
|
Current - Reverse Leakage @ Vr | 500µA @ 60V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Through Hole |
|
50%
|
Operating Temperature - Junction | -65°C ~ 150°C |
|
50%
|
Package / Case | DO-201AD, Axial |
|
50%
|
Packaging | Tape & Box (TB) |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 60V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 700mV @ 3A |