MUR360SBHM4G

Производитель: Taiwan Semiconductor Corporation
Описание: 40pF @ 4V, 1MHz; 3A; 10µA @ 600V; Standard; Surface Mount; -55°C ~ 175°C; DO-214AA, SMB; Tape & Reel (TR); 50ns; This part is RoHS compliant.; Automotive, AEC-Q101; Fast Recovery =< 500ns, > 200mA (Io); 600V; 1.25V @ 3A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 40pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 10µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -55°C ~ 175°C
50%
Package / Case DO-214AA, SMB
50%
Packaging Tape & Reel (TR)
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series Automotive, AEC-Q101
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.25V @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
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