ES2DHE3_A/I
| Производитель: | Vishay Semiconductor Diodes Division |
| Описание: | 18pF @ 4V, 1MHz; 2A; 10µA @ 50V; Standard; Surface Mount; -55°C ~ 150°C; DO-214AA, SMB; Tape & Reel (TR) Alternate Packaging; 20ns; This part is RoHS compliant.; Automotive, AEC-Q101; Fast Recovery =< 500ns, > 200mA (Io); 200V; 900mV @ 2A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | 18pF @ 4V, 1MHz |
|
50%
|
Current - Average Rectified (Io) | 2A |
|
50%
|
Current - Reverse Leakage @ Vr | 10µA @ 50V |
|
50%
|
Diode Type | Стандарт |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
|
50%
|
Package / Case | DO-214AA, SMB |
|
50%
|
Packaging | Tape & Reel (TR) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | 20ns |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | Automotive, AEC-Q101 |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 200V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 900mV @ 2A |