TSPB5H150S S2G
| Производитель: | Taiwan Semiconductor Corporation |
| Описание: | -; 5A; 100µA @ 150V; Schottky; Surface Mount; -55°C ~ 150°C; TO-277, 3-PowerDFN; Tape & Reel (TR); -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 150V; 840mV @ 5A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 5A |
|
50%
|
Current - Reverse Leakage @ Vr | 100µA @ 150V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
|
50%
|
Package / Case | TO-277, 3-PowerDFN |
|
50%
|
Packaging | Tape & Reel (TR) |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 150V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 840mV @ 5A |