SS8P2LHM3_A/I
| Производитель: | Vishay Semiconductor Diodes Division |
| Описание: | 330pF @ 4V, 1MHz; 8A; 200µA @ 30V; Schottky; Surface Mount; -55°C ~ 150°C; TO-277, 3-PowerDFN; Tape & Reel (TR) Alternate Packaging; -; This part is RoHS compliant.; Automotive, AEC-Q101, eSMP®; Fast Recovery =< 500ns, > 200mA (Io); 20V; 570mV @ 8A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | 330pF @ 4V, 1MHz |
|
50%
|
Current - Average Rectified (Io) | 8A |
|
50%
|
Current - Reverse Leakage @ Vr | 200µA @ 30V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
|
50%
|
Package / Case | TO-277, 3-PowerDFN |
|
50%
|
Packaging | Tape & Reel (TR) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | Automotive, AEC-Q101, eSMP® |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 20V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 570mV @ 8A |