MBRF760 C0G

Производитель: Taiwan Semiconductor Corporation
Описание: -; 7.5A; 100µA @ 60V; Schottky; Through Hole; -55°C ~ 150°C; TO-220-2 Full Pack; Tube; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 60V; 750mV @ 7.5A;
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 7.5A
50%
Current - Reverse Leakage @ Vr 100µA @ 60V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case TO-220-2 Full Pack
50%
Packaging Tube
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 60V
50%
Voltage - Forward (Vf) (Max) @ If 750mV @ 7.5A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MBR760 C0G - 7.5A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBRF750 C0G - 7.5A 100µA @ 50V Schottky Through Hole -55°C ~ 150°C
MBRF760 C0G - 7.5A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBR750HC0G - 7.5A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBR760HC0G - 7.5A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBRF1060 C0G - 10A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBRF760HC0G - 7.5A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBRF1060HC0G - 10A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
SRAF860HC0G - 8A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C
SRAF860 C0G - 8A 100µA @ 60V Schottky Through Hole -55°C ~ 150°C