MB3035S-E3/4W

Производитель: Vishay Semiconductor Diodes Division
Описание: 980pF @ 4V, 1MHz; 30A; 200µA @ 35V; Schottky; Surface Mount; -65°C ~ 150°C; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; Tube; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 35V; 700mV @ 30A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 980pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 30A
50%
Current - Reverse Leakage @ Vr 200µA @ 35V
50%
Diode Type Schottky
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
50%
Packaging Tube
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 35V
50%
Voltage - Forward (Vf) (Max) @ If 700mV @ 30A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MB3035S-E3/4W 980pF @ 4V, 1MHz 30A 200µA @ 35V Schottky Surface Mount -65°C ~ 150°C
MB3035S-E3/8W 980pF @ 4V, 1MHz 30A 200µA @ 35V Schottky Surface Mount -65°C ~ 150°C