HERAF802G C0G

Производитель: Taiwan Semiconductor Corporation
Описание: 80pF @ 4V, 1MHz; 8A; 10µA @ 100V; Standard; Through Hole; -55°C ~ 150°C; TO-220-2 Full Pack; Tube; 50ns; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 100V; 1V @ 8A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 80pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 8A
50%
Current - Reverse Leakage @ Vr 10µA @ 100V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case TO-220-2 Full Pack
50%
Packaging Tube
50%
Reverse Recovery Time (trr) 50ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 100V
50%
Voltage - Forward (Vf) (Max) @ If 1V @ 8A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
HERA802G C0G 65pF @ 4V, 1MHz 8A 10µA @ 100V Standard Through Hole -55°C ~ 150°C
HERAF801G C0G 80pF @ 4V, 1MHz 8A 10µA @ 50V Standard Through Hole -55°C ~ 150°C
HERAF802G C0G 80pF @ 4V, 1MHz 8A 10µA @ 100V Standard Through Hole -55°C ~ 150°C
HERAF803G C0G 80pF @ 4V, 1MHz 8A 10µA @ 200V Standard Through Hole -55°C ~ 150°C
HERAF804G C0G 80pF @ 4V, 1MHz 8A 10µA @ 300V Standard Through Hole -55°C ~ 150°C
HERAF1002G C0G 80pF @ 4V, 1MHz 10A 10µA @ 100V Standard Through Hole -55°C ~ 150°C