MBR1050HC0G
| Производитель: | Taiwan Semiconductor Corporation |
| Описание: | -; 10A; 100µA @ 50V; Standard; Through Hole; -55°C ~ 150°C; TO-220-2; Tube; -; This part is RoHS compliant.; Automotive, AEC-Q101; Fast Recovery =< 500ns, > 200mA (Io); 50V; 800mV @ 10A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 10A |
|
50%
|
Current - Reverse Leakage @ Vr | 100µA @ 50V |
|
50%
|
Diode Type | Стандарт |
|
50%
|
Mounting Type | Through Hole |
|
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
|
50%
|
Package / Case | TO-220-2 |
|
50%
|
Packaging | Tube |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | Automotive, AEC-Q101 |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 50V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 800mV @ 10A |