FESB8DTHE3/81
| Производитель: | Vishay Semiconductor Diodes Division |
| Описание: | -; 8A; 10µA @ 200V; Standard; Surface Mount; -55°C ~ 150°C; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; Tape & Reel (TR) Alternate Packaging; 35ns; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 200V; 950mV @ 8A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 8A |
|
50%
|
Current - Reverse Leakage @ Vr | 10µA @ 200V |
|
50%
|
Diode Type | Стандарт |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -55°C ~ 150°C |
|
50%
|
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
50%
|
Packaging | Tape & Reel (TR) Alternate Packaging |
|
50%
|
Reverse Recovery Time (trr) | 35ns |
|
50%
|
RoHS | This part is RoHS compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 200V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 950mV @ 8A |