JAN1N5615
| Производитель: | Microsemi Corporation |
| Описание: | -; 1A; 500nA @ 200V; Standard; Through Hole; -65°C ~ 175°C; A, Axial; Bulk; 150ns; This part is RoHS non-compliant.; Military, MIL-PRF-19500/429; Fast Recovery =< 500ns, > 200mA (Io); 200V; 1.6V @ 3A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 1A |
|
50%
|
Current - Reverse Leakage @ Vr | 500nA @ 200V |
|
50%
|
Diode Type | Стандарт |
|
50%
|
Mounting Type | Through Hole |
|
50%
|
Operating Temperature - Junction | -65°C ~ 175°C |
|
50%
|
Package / Case | A, Axial |
|
50%
|
Packaging | Bulk |
|
50%
|
Reverse Recovery Time (trr) | 150ns |
|
50%
|
RoHS | This part is RoHS non-compliant. |
|
50%
|
Series | Military, MIL-PRF-19500/429 |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 200V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 1.6V @ 3A |