ES1J-TP

Производитель: Micro Commercial Co
Описание: DIODE GEN PURP 600V 1A DO214AC
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 45pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -50°C ~ 150°C
50%
Package / Case DO-214AC, SMA
50%
Packaging Tape & Reel (TR) Alternate Packaging
50%
Reverse Recovery Time (trr) 75ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.35V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
ES1JE-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C
ES1JE-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C
ES1JE-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C
ES1GE-TP 45pF @ 4V, 1MHz 1A 5µA @ 400V Standard Surface Mount -50°C ~ 150°C
ES1J-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C
ES1J-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C
ES1J-TP 45pF @ 4V, 1MHz 1A 5µA @ 600V Standard Surface Mount -50°C ~ 150°C