1N4937RL

Производитель: ON Semiconductor
Описание: DIODE GEN PURP 600V 1A DO41
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 1A
50%
Current - Reverse Leakage @ Vr 5µA @ 600V
50%
Diode Type Стандарт
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 150°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Tape & Reel (TR)
50%
Reverse Recovery Time (trr) 300ns
50%
RoHS This part is RoHS non-compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 600V
50%
Voltage - Forward (Vf) (Max) @ If 1.2V @ 1A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
PR1005-T 8pF @ 4V, 1MHz 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C
1N4937G-T - 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C
1N4937RLG - 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C
1N4937RLG - 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C
1N4933RL - 1A 5µA @ 50V Standard Through Hole -65°C ~ 150°C
1N4934RL - 1A 5µA @ 100V Standard Through Hole -65°C ~ 150°C
1N4935RL - 1A 5µA @ 200V Standard Through Hole -65°C ~ 150°C
1N4936RL - 1A 5µA @ 400V Standard Through Hole -65°C ~ 150°C
1N4937RL - 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C
1N4937 - 1A 5µA @ 600V Standard Through Hole -65°C ~ 150°C