MBR750

Производитель: Diodes Incorporated
Описание: 400pF @ 4V, 1MHz; 7.5A; 500µA @ 50V; Schottky; Through Hole; -55°C ~ 150°C; TO-220-2; Tube; -; This part is RoHS compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 50V; 750mV @ 7.5A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F 400pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 7.5A
50%
Current - Reverse Leakage @ Vr 500µA @ 50V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case TO-220-2
50%
Packaging Tube
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 50V
50%
Voltage - Forward (Vf) (Max) @ If 750mV @ 7.5A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
MBR750 - 7.5A 500µA @ 50V Schottky Through Hole -65°C ~ 150°C
MBR750 C0G - 7.5A 100µA @ 50V Schottky Through Hole -55°C ~ 150°C
MBR750 400pF @ 4V, 1MHz 7.5A 500µA @ 50V Schottky Through Hole -55°C ~ 150°C
MBR760 400pF @ 4V, 1MHz 7.5A 500µA @ 60V Schottky Through Hole -55°C ~ 150°C
MBR750-E3/45 - 7.5A 500µA @ 50V Schottky Through Hole -65°C ~ 175°C
MBR750HE3/45 - 7.5A 500µA @ 50V Schottky Through Hole -65°C ~ 175°C