ES2DHE3/52T

Производитель: Vishay Semiconductor Diodes Division
Описание: DIODE GEN PURP 200V 2A DO214AA
Аналоги
% соответствия		 Product Attributes
50%
Capacitance @ Vr, F 18pF @ 4V, 1MHz
50%
Current - Average Rectified (Io) 2A
50%
Current - Reverse Leakage @ Vr 10µA @ 200V
50%
Diode Type Стандарт
50%
Mounting Type Surface Mount
50%
Operating Temperature - Junction -55°C ~ 150°C
50%
Package / Case DO-214AA, SMB
50%
Packaging Digi-Reel®
50%
Reverse Recovery Time (trr) 30ns
50%
RoHS This part is RoHS compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 200V
50%
Voltage - Forward (Vf) (Max) @ If 900mV @ 2A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
ES2D-E3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2D-E3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2D-E3/5BT 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2D-M3/5BT 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2D-M3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2DHE3/5BT 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2DHE3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2DHE3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2DHE3/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C
ES2DHE3J/52T 18pF @ 4V, 1MHz 2A 10µA @ 200V Standard Surface Mount -55°C ~ 150°C