1N5821US
| Производитель: | Microsemi Corporation |
| Описание: | -; 3A; 100µA @ 30V; Schottky; Surface Mount; -65°C ~ 125°C; SQ-MELF, B; Bulk; -; This part is RoHS non-compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 30V; 500mV @ 3A; |
| Аналоги % соответствия |
Product Attributes | |
|---|---|---|
|
50%
|
Capacitance @ Vr, F | - |
|
50%
|
Current - Average Rectified (Io) | 3A |
|
50%
|
Current - Reverse Leakage @ Vr | 100µA @ 30V |
|
50%
|
Diode Type | Schottky |
|
50%
|
Mounting Type | Surface Mount |
|
50%
|
Operating Temperature - Junction | -65°C ~ 125°C |
|
50%
|
Package / Case | SQ-MELF, B |
|
50%
|
Packaging | Bulk |
|
50%
|
Reverse Recovery Time (trr) | - |
|
50%
|
RoHS | This part is RoHS non-compliant. |
|
50%
|
Series | - |
|
50%
|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
|
50%
|
Voltage - DC Reverse (Vr) (Max) | 30V |
|
50%
|
Voltage - Forward (Vf) (Max) @ If | 500mV @ 3A |