DSB5821

Производитель: Microsemi Corporation
Описание: -; 3A; 100µA @ 30V; Schottky; Through Hole; -65°C ~ 125°C; DO-204AL, DO-41, Axial; Bulk; -; This part is RoHS non-compliant.; -; Fast Recovery =< 500ns, > 200mA (Io); 30V; 500mV @ 3A;
Аналоги
% соответствия
Product Attributes
50%
Capacitance @ Vr, F -
50%
Current - Average Rectified (Io) 3A
50%
Current - Reverse Leakage @ Vr 100µA @ 30V
50%
Diode Type Schottky
50%
Mounting Type Through Hole
50%
Operating Temperature - Junction -65°C ~ 125°C
50%
Package / Case DO-204AL, DO-41, Axial
50%
Packaging Bulk
50%
Reverse Recovery Time (trr) -
50%
RoHS This part is RoHS non-compliant.
50%
Series -
50%
Speed Fast Recovery =< 500ns, > 200mA (Io)
50%
Voltage - DC Reverse (Vr) (Max) 30V
50%
Voltage - Forward (Vf) (Max) @ If 500mV @ 3A

Аналоги:

Название Capacitance @ Vr, F Current - Average Rectified (Io) Current - Reverse Leakage @ Vr Diode Type Mounting Type Operating Temperature - Junction
1N5821US - 3A 100µA @ 30V Schottky Surface Mount -65°C ~ 125°C
DSB3A30 - 3A 100µA @ 30V Schottky Through Hole -65°C ~ 125°C
DSB5820 - 3A 100µA @ 20V Schottky Through Hole -65°C ~ 125°C
DSB5821 - 3A 100µA @ 30V Schottky Through Hole -65°C ~ 125°C
DSB5822 - 3A 100µA @ 40V Schottky Through Hole -65°C ~ 125°C